Electronic Ceramics Laboratory

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Outline

We are now doing fundamental researches on novel processings for high-performance electronic ceramics such as high-Tc superconductors, oxide thermoelectric materials and ferroelectric materials for non-volatile memories and actuators. Our researches will extend to ceramic thin films processings, which are compatible with IC production lines.

Projects

1. New oxide thermoelectric materials for high-temperature applications (FY1998-2000)
2. Sol-gel processings for ceramic thin films (FY1995-1998)
3. Microstructural controlling technology for conductive or dielectric ceramics (FY1994-1998)

Staffs

Leader	Norimitsu MURAYAMA	murayama@nirin.go.jp
	Tadashi SEKIYA
	Kazumi KATO
	Keiji KUSUMOTO
	Woosuck SHIN
	Kazuyuki Suzuki

Topics

1) Low-temperature synthesis of ferroelectric thin films for non-volatile memories
In sol-gel processings, ferroelectric thin films (SrBi₂Ta₂O₉, SBT) have been successfully prepared at relatively low temperatures compared with conventional methods. A key point is the development of a compound alkoxide solution (precursor), in that the triple alkoxide metal-oxygen alignment closely resembles the SBT crystal structure, resulting in lowering the activation energy for cyrstallization of the precursor. Usually, precursors should be fired above 800^oC for SBT thin films with good ferroelectric properties. By using the developed compound alkoxide solution, the firing temperature has been lowered to 650-700^oC.

2) Research on oxide thermoelectric materials
A new oxide thermoelectric material,Ba_1-xSr_xPbO₃, has been found for high-temperature thermoelectric energy conversion using the waste heat, for example, from refuse burners. When conventional, intermetalic themoelectric materials are used at high temperatures in air, these materials should be coated to prevent oxidation . Another approach is finding new oxide thermoelectric materials, which are stable at high temperatures in air, and developing theromoelectric energy conversion elements consisting of oxide materials. The present result is the first step in the above research.

 

 

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